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FMMZ5244 MC145011 800DB45N LM052 0J101 MP1591DS 74LS14 MAX1169
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  Datasheet File OCR Text:
 2SA812
PNP General Purpose Transistors
P b Lead(Pb)-Free
1 2 3
SOT-23
MAXIMUM RATINGS(Ta=25C)
Rating
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation TA=25C Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO IC PD Tj Tstg
Value
-60 -50 -5.0 -100 200 +150 -55 to +150
Unit
V V V mA mW C C
WEITRON
http://www.weitron.com.tw
1/3
08-Dec-06
2SA812
ELECTRICAL CHARACTERISTICS Characteristics
Collector-Base Breakdown Voltage IC = -100A, IE = 0A Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0A Emitter-Base Breakdown Voltage IE= 100A, IC=0 Collector Cutoff Current VCB = -60V, IE = 0A Emitter Cutoff Current VEB = -5V, IC = 0A
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO
Min
-60 -50 -5.0 -
Typ
-
Max
-0.1 -0.1
Unit
V V V A A
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage IC = -100mA, IB = -10mA Collector-Emitter Voltage IC = -1mA, VCE = -6V, DC Current Transfer Ration VCE = -6V, IC = -1mA VCE(sat) VBE(on) hFE 90 -0.3 -0.68 600 V V
SMALL-SIGNAL CHARACTERISTICS
Transition frequence VCE=-6V, IC = -10mA fT 180 MHz
CLASSIFICATION hFE Range Marking 90-180 M4 135-270 M5 200-400 M6 300-600 M7
WEITRON
http://www.weitron.com.tw
2/3
08-Dec-06
2SA812
SOT-23 Outline Dimension
A
SOT-23
Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25
TOP VIEW D E G H
B
C
K J L M
WEITRON
http://www.weitron.com.tw
3/3
08-Dec-06


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